Theeradetch Detchprohm
4Patents
3h-index
15Co-inventors
51Inventor score
Filing activity: Feb 7, 1996 → Mar 23, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5846844A | Method for producing group III nitride compound semiconductor substrates using ZnO release layers | Emerging Cross-Sectional Technologies | 58 | Expired |
| US7323721B2 | Monolithic multi-color, multi-quantum well semiconductor LED | Electricity | 21 | Expired |
| US9520472B2 | Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure | Electricity | 5 | Active |
| US11195722B2 | Method of manufacture using complementary conductivity-selective wet-etching techniques for III-nitride materials and devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.