Substrate treatment apparatus and manufacturing method of a semiconductor device
US11195744B2 · kind B2 · utility
1Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Feb 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32834
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate treatment apparatus according to an embodiment of the present invention includes a chamber, a stage, a gas discharger, a plasma generator, and a rotation mechanism. The stage supports a semiconductor substrate in the chamber. The gas discharger discharges a film formation gas toward the semiconductor substrate from a position opposing the stage. The plasma generator is provided on the gas discharger and generates plasma in the chamber during discharge of the film formation gas. The rotation mechanism rotates the stage during generation of the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.