Method for forming semiconductor contact structure
US11195791B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Jan 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor contact structure is provided. The method includes depositing a dielectric layer over a substrate. The method also includes etching the dielectric layer to expose a sidewall of the dielectric layer and a top surface of the substrate. In addition, the method includes forming a silicide region in the substrate. The method also includes applying a plasma treatment to the sidewall of the dielectric layer and the top surface of the substrate to form a nitridation region adjacent to a periphery of the silicide region. The method further includes depositing an adhesion layer on the dielectric layer and the silicide region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.