Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)
US11195840B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Jul 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
Some embodiments relate to a ferroelectric random access memory (FeRAM) device. The FeRAM device includes a bottom electrode structure and a top electrode overlying the ferroelectric structure. The top electrode has a first width as measured between outermost sidewalls of the top electrode. A ferroelectric structure separates the bottom electrode structure from the top electrode. The ferroelectric structure has a second width as measured between outermost sidewalls of the ferroelectric structure. The second width is greater than the first width such that the ferroelectric structure includes a ledge that reflects a difference between the first width and the second width. A dielectric sidewall spacer structure is disposed on the ledge and covers the outermost sidewalls of the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.