Tzu-Yu Chen
54Patents
5h-index
33Co-inventors
72Inventor score
Filing activity: Sep 16, 1991 → Oct 7, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7179384B2 | Control of cooling water system using rate of consumption of fluorescent polymer | Chemistry; Metallurgy | 17 | Expired |
| US10930333B2 | Embedded ferroelectric memory cell | Physics | 15 | Active |
| US5448178A | Transient technique to determine solution resistance for simple and accurate corrosion rate measurements | Physics | 15 | Expired |
| US5188715A | Condensate corrosion sensor | Physics | 14 | Expired |
| US5849220A | Corrosion inhibitor | Chemistry; Metallurgy | 10 | Expired |
| US9274617B2 | Optical navigation apparatus calculating an image quality index to determine a matching block size | Physics | 3 | Active |
| US11183503B2 | Memory cell having top and bottom electrodes defining recesses | Electricity | 3 | Active |
| US11437084B2 | Embedded ferroelectric memory cell | Physics | 3 | Active |
| US11296099B2 | FeRAM decoupling capacitor | Electricity | 2 | Active |
| US10627518B2 | Tracking device with improved work surface adaptability | Physics | 2 | Active |
| US9831262B2 | Embedded HKMG non-volatile memory | Electricity | 2 | Active |
| US9793286B2 | Embedded HKMG non-volatile memory | Electricity | 2 | Active |
| US9261982B2 | Image adjusting method and optical navigating apparatus utilizing the image adjusting method | Physics | 1 | Active |
| US11227872B2 | FeRAM MFM structure with selective electrode etch | Electricity | 1 | Active |
| US10962646B2 | Electronic device with improved work surface adaptability | Physics | 1 | Active |
| US10029423B2 | Printing correction method and three-dimensional printing device | Physics | 1 | Active |
| US11088203B2 | 3D RRAM cell structure for reducing forming and set voltages | Physics | 1 | Active |
| US11921940B1 | Optical navigation device capable of automatically switching between different tracking modes in response to different tracking surfaces | Physics | 1 | Active |
| US11706930B2 | Semiconductor device and method for manufacturing the same | Electricity | 1 | Active |
| US11869564B2 | Embedded ferroelectric memory cell | Physics | 1 | Active |
| US11195840B2 | Method and structures pertaining to improved ferroelectric random-access memory (FeRAM) | Electricity | 1 | Active |
| US11849588B2 | Semiconductor device and method of forming the same | Electricity | 0 | Active |
| US12114509B2 | FeRAM decoupling capacitor | Electricity | 0 | Active |
| US11785777B2 | FeRAM MFM structure with selective electrode etch | Electricity | 0 | Active |
| US11307308B2 | Tracking device and electronic device with improved work surface adaptability | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.