Semiconductor device and method of manufacturing the same
US11195849B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Sep 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/2011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor device includes a first film including a plurality of electrode layers and a plurality of insulating layers provided alternately in a first direction, and a first semiconductor layer provided in the first film via a charge storage layer and extending in the first direction. The device further includes a first conductive member provided in the first film and extending in the first direction, and a second semiconductor layer provided on the first film to contact the first semiconductor layer. The second semiconductor layer includes a first surface on a side of the first film, and a second surface on an opposite side of the first surface. The second surface is an uneven face protruding towards the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.