Optoelectronic device comprising three-dimensional semiconductor structures in an axial configuration
US11195878B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2018 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Aug 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic device including a first optoelectronic circuit bonded to a second electronic circuit. The second electronic circuit includes conductive pads. The first optoelectronic circuit includes, for each pixel: at least first and second three-dimensional semiconductor elements extending over a first conductive layer and having the same height; first active areas resting on the first semiconductor elements and capable of emitting or receiving a first electromagnetic radiation; second active areas resting on the second semiconductor elements and capable of emitting or receiving a second electromagnetic radiation; and second, third, and fourth conductive layers electrically coupled to the conductive pads, the second, third, and fourth conductive layers being respectively coupled to the first active areas, to the second active areas, and to the first conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.