Metal-oxide-semiconductor transistor and method of fabricating the same
US11195905B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Mar 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. A first doped line is located in the substrate, located at a first side of the gate structure line, and crosses over the trenches. A second doped line is located in the substrate, located at a second side of the gate structure line, and crosses over the trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.