High voltage semiconductor device and manufacturing method thereof
US11195948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2020 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Jun 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage semiconductor device includes a semiconductor substrate, a gate structure, a drift region, a drain region, and an isolation structure. The gate structure is disposed on the semiconductor substrate. The drift region is disposed in the semiconductor substrate and partially disposed at a side of the gate structure. The drain region is disposed in the drift region. The isolation structure is at least partially disposed in the drift region. A part of the isolation structure is disposed between the drain region and the gate structure. A top of the isolation structure includes a flat surface, and a bottom of the isolation structure includes a curved surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.