Semiconductor device with self-aligned wavy contact profile and method of forming the same

US11195951B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chia-Ta Yu · New Taipei, TW
• Yen-Chieh Huang · New Taipei, TW
• Wei-Yuan Lu · Taipei, TW
• Feng-Cheng Yang · Dashulong, TW
• Yen-Ming Chen · Taipei, TW

Key dates

• Filing date: Oct 18, 2019
• Grant date: Dec 7, 2021
• Expiry date: Oct 18, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.