Feng-Cheng Yang
212Patents
7h-index
110Co-inventors
77Inventor score
Filing activity: Aug 13, 2003 → Apr 17, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9942463B2 | Camera device without image displaying function | Electricity | 56 | Active |
| US10522642B2 | Semiconductor device with air-spacer | Electricity | 23 | Active |
| US11423966B2 | Memory array staircase structure | Electricity | 15 | Active |
| US9570556B1 | Semiconductor device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 14 | Active |
| US10276691B2 | Conformal transfer doping method for fin-like field effect transistor | Electricity | 9 | Active |
| US11355516B2 | Three-dimensional memory device and method | Electricity | 8 | Active |
| US9748389B1 | Method for semiconductor device fabrication with improved source drain epitaxy | Electricity | 8 | Active |
| US10483266B2 | Flexible merge scheme for source/drain epitaxy regions | Electricity | 6 | Active |
| US9812576B2 | Semiconductor device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 6 | Active |
| US10217815B1 | Integrated circuit device with source/drain barrier | Electricity | 6 | Active |
| US10037923B1 | Forming transistor by selectively growing gate spacer | Electricity | 5 | Active |
| US10141231B1 | FinFET device with wrapped-around epitaxial structure and manufacturing method thereof | Electricity | 5 | Active |
| US10529803B2 | Semiconductor device with epitaxial source/drain | Electricity | 5 | Active |
| US11195951B2 | Semiconductor device with self-aligned wavy contact profile and method of forming the same | Electricity | 5 | Active |
| US9285926B2 | Input device with optical module for determining a relative position of an object thereon | Physics | 5 | Active |
| US9780214B2 | Semiconductor device including Fin- FET and manufacturing method thereof | Electricity | 5 | Active |
| US9865504B2 | Semiconductor device and manufacturing method thereof | Electricity | 4 | Active |
| US10283624B1 | Semiconductor structure and method for forming the same | Electricity | 4 | Active |
| US9940980B2 | Hybrid LPDDR4-DRAM with cached NVM and flash-nand in multi-chip packages for mobile devices | Electricity | 4 | Active |
| US11018134B2 | Semiconductor device and method for manufacturing the same | Electricity | 4 | Active |
| US11631746B2 | Semiconductor device and method of manufacture | Electricity | 3 | Active |
| US9680017B2 | Semiconductor device including Fin FET and manufacturing method thereof | Electricity | 3 | Active |
| US6797587B1 | Active region corner implantation method for fabricating a semiconductor integrated circuit microelectronic fabrication | Electricity | 3 | Expired |
| US11616142B2 | Semiconductor device with self-aligned wavy contact profile and method of forming the same | Electricity | 3 | Active |
| US9865595B1 | FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.