Variable resistance memory devices including self-heating layer and methods of manufacturing the same
US11195997B2 · kind B2 · utility
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Key dates
| Filing date | Mar 23, 2020 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Mar 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A variable resistance memory device includes a first conductive line structure having an adiabatic line therein on a substrate, a variable resistance pattern contacting an upper surface of the first conductive line structure, a low resistance pattern contacting an upper surface of the variable resistance pattern, a selection structure on the low resistance pattern, and a second conductive line on the selection structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.