Fin field-effect transistor device and method of forming the same
US11201084B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2019 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Aug 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming a first dummy gate structure and a second dummy gate structure over a fin protruding above a substrate, where the first dummy gate structure and the second dummy gate structure are surrounded by a dielectric layer; and replacing the first dummy gate structure and the second dummy gate structure with a first metal gate and a second metal gate, respectively, where the replacing includes: removing the first and the second dummy gate structures to form a first recess and a second recess in the dielectric layer, respectively; forming a gate dielectric layer in the first recess and in the second recess; forming an N-type work function layer and a capping layer successively over the gate dielectric layer in the second recess but not in the first recess; and filling the first recess and the second recess with an electrically conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.