Semiconductor device and manufacturing method of the semiconductor device
US11201214B2 · kind B2 · utility
3Cited by
7References
23Claims
0Family size
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Key dates
| Filing date | Apr 3, 2020 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Jul 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A semiconductor device includes a stack structure including conductive layers and insulating layers that are alternately stacked with each other, a first channel layer passing through the stack structure and including a metal oxide-based semiconductor, and a second channel layer adjacent to the first channel layer and including the metal oxide-based semiconductor, wherein the first channel layer has a higher oxygen content than the second channel layer and has a different thickness from the second channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.