Methods for group V doping of photovoltaic devices

US11201257B2 · kind B2 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Sachit Grover · Campbell, US
• Dingyuan Lu · San Jose, US
• Roger Malik · Summit, US
• Gang Xiong · Beaverton, US

Key dates

• Filing date: Jan 14, 2019
• Grant date: Dec 14, 2021
• Expiry date: Jan 14, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/543

Abstract

According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.