Roger Malik
27Patents
11h-index
36Co-inventors
75Inventor score
Filing activity: Jun 8, 1979 → Nov 14, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4563773A | Monolithic planar doped barrier subharmonic mixer | Electricity | 114 | Expired |
| US4894526A | Infrared-radiation detector device | Electricity | 72 | Expired |
| US4945393A | Floating gate memory circuit and apparatus | Electricity | 67 | Expired |
| US4905063A | Floating gate memories | Electricity | 64 | Expired |
| US4410902A | Planar doped barrier semiconductor device | Electricity | 42 | Expired |
| US5023685A | Quantum-well radiation-interactive device, and methods of radiation detection and modulation | Electricity | 38 | Expired |
| US5001534A | Heterojunction bipolar transistor | Electricity | 33 | Expired |
| US4794440A | Heterojunction bipolar transistor | Electricity | 30 | Expired |
| US6541346B2 | Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process | Electricity | 23 | Expired |
| US4825265A | Transistor | Electricity | 16 | Expired |
| US5106766A | Method of making a semiconductor device that comprises p-type III-V semiconductor material | Emerging Cross-Sectional Technologies | 16 | Expired |
| US4247358A | Method of growing single crystals of alpha aluminum phosphate | Chemistry; Metallurgy | 10 | Expired |
| US11158749B2 | Doped photovoltaic semiconductor layers and methods of making | Emerging Cross-Sectional Technologies | 8 | Active |
| US4667211A | Millimeter wave-infrared bloch oscillator/detector | Electricity | 8 | Expired |
| US4539581A | Planar doped barrier transferred electron oscillator | Electricity | 7 | Expired |
| US4442445A | Planar doped barrier gate field effect transistor | Electricity | 7 | Expired |
| US11342471B2 | Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks | Emerging Cross-Sectional Technologies | 7 | Active |
| US4939102A | Method of growing III-V semiconductor layers with high effective hole concentration | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6894362B2 | Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process | Electricity | 7 | Expired |
| US11201257B2 | Methods for group V doping of photovoltaic devices | Emerging Cross-Sectional Technologies | 6 | Active |
| US11502212B2 | Photovoltaic devices and semiconductor layers with group V dopants and methods for forming the same | Emerging Cross-Sectional Technologies | 5 | Active |
| US4654609A | Monolithic planar doped barrier limiter | Electricity | 4 | Expired |
| US11367805B2 | Solar cells and methods of making the same | Emerging Cross-Sectional Technologies | 3 | Active |
| US11791427B2 | Doped photovoltaic semiconductor layers and methods of making | Emerging Cross-Sectional Technologies | 2 | Active |
| US5329151A | Semiconductor diode | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.