Magnetic memory structure and device
US11201282B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 2020 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Jun 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic memory devices and methods are provided. In one aspect, a memory device may comprise a control circuitry and at least one array of memory structures. Each memory structure may comprise a metal layer and a first magnetic tunnel junction (MTJ) disposed on the metal layer. The metal layer may include a first region and a second region. Electrical resistivity of at least a first part of the first region is different from electrical resistivity of the second region. The first magnetic tunnel junction (MTJ) may comprise a first free layer adjacent to the metal layer, a first barrier layer adjacent to the first free layer, and a first reference layer adjacent to the first barrier layer. The first free layer is in contact with the first region of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.