Semiconductor laser

US11201454B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Clemens Vierheilig · Tegernheim, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Sven Gerhard · Alteglofsheim, DE
• Andreas Loeffler · Neutraubling, DE

Key dates

• Filing date: Apr 7, 2017
• Grant date: Dec 14, 2021
• Expiry date: Oct 8, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2304/12
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.