Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof
US11205573B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2018 |
| Grant date | Dec 21, 2021 |
| Priority date | — |
| Expiry date | Sep 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) below R1R2R3Ge—Co(CO)4 (1) (where R1, R2 and R3 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group) Co(CO)4R4R5Ge—Co(CO)4 (2) (where R4 and R5 are each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.