Three-dimensional memory device with corrosion-resistant composite spacer
US11205658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2018 |
| Grant date | Dec 21, 2021 |
| Priority date | — |
| Expiry date | Apr 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of a three-dimensional (3D) memory device with a corrosion-resistant composite spacer and method for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack disposed on the substrate and including a plurality of conductor/dielectric layer pairs, a plurality of memory strings each extending vertically through the memory stack, a slit contact disposed laterally between the plurality of memory strings, and a composite spacer disposed laterally between the slit contact and at least one of the memory strings. The composite spacer includes a first silicon oxide film, a second silicon oxide film, and a dielectric film disposed laterally between the first silicon oxide film and the second silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.