Embedded MRAM device with top via

US11205678B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ashim Dutta · Clifton Park, US
• Ekmini Anuja De Silva · Slingerlands, US
• Dominik Metzler · Clifton Park, US

Key dates

• Filing date: Feb 3, 2020
• Grant date: Dec 21, 2021
• Expiry date: May 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

Techniques for integrating an embedded MRAM device with a BEOL interconnect structure are provided. In one aspect, a method of forming an embedded MRAM device includes: depositing a cap layer onto a substrate; forming a metal line and metal pad on the cap layer; patterning the metal line to form first top vias, and the metal pad to form a second top via; depositing a dielectric material onto the substrate surrounding the first/second top vias; recessing the second top via to form a bottom contact via self-aligned to the metal pad which serves as a bottom contact; forming an MRAM cell over the bottom contact via; and forming first/second top contacts in contact with the first top vias/the MRAM cell. An embedded MRAM device is also provided.