Epitaxial semiconductor material regions for transistor devices and methods of forming same
US11205699B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2019 |
| Grant date | Dec 21, 2021 |
| Priority date | — |
| Expiry date | Dec 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
One illustrative transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate and first and second overall epitaxial cavities formed in the semiconductor substrate on opposite sides of the gate structure. In one embodiment, each of the first and second overall epitaxial cavities includes a substantially vertically oriented upper epitaxial cavity and a lower epitaxial cavity, wherein the substantially vertically oriented upper epitaxial cavity extends from an upper surface of the semiconductor substrate to the lower epitaxial cavity. A lateral width of the lower epitaxial cavity is greater than a lateral width of the upper epitaxial cavity. The device also includes epitaxial semiconductor material positioned in each of the first and second overall epitaxial cavities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.