Mask and method for fabricating the same
US11209728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2019 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Aug 7, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Present disclosure provide a method for fabricating a mask, including obtaining a target pattern to be imaged onto a substrate, providing a first scattering bar and a second scattering bar adjacent to consecutive edges of the target pattern, identifying a first length of the first scattering bar and a second length of the second scattering bar, connecting the first scattering bar and the second scattering bar when any of the first length and the second length is smaller than a predetermined value, identifying a separation between the first scattering bar and the second scattering bar subsequent to identifying the first length and the second length, disposing the first scattering bar and the second scattering bar in a first fashion when the separation is equal to zero, and disposing the first scattering bar and the second scattering bar in a second fashion when the separation is greater than zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.