Semiconductor substrate

US11211307B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Georg Troska · Herten, DE
• Hans Hartung · Warstein, DE
• Marianna Nomann · Ottobeuren, DE

Key dates

• Filing date: Nov 1, 2019
• Grant date: Dec 28, 2021
• Expiry date: Feb 24, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/49822
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A semiconductor substrate includes a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer. The dielectric insulation layer includes a first material having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and an electrically conducting or semiconducting second material evenly distributed within the first material.