Three-dimensional memory device with source structure and methods for forming the same
US11211394B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2019 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Dec 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack, a plurality of channel structures, and a source structure. The memory stack is over a substrate and includes interleaved a plurality of conductor layers and a plurality of insulating layers. The source structure includes a plurality of source contacts, and two adjacent ones of the plurality of source contacts are conductively connected to one another by a connection layer. A pair of first portions of the connection layer are over the two adjacent ones of the plurality of source contacts and a second portion of the connection layer being between the two adjacent ones of the plurality of source contacts. Top surfaces of the pair of first portions of the connection are coplanar with a top surface of the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.