Integrated circuit including transistors having a common base

US11211428B2 · kind B2 · utility

Assignee

• STMicroelectronics (Rousset) SAS · FR

Inventor

• Philippe Boivin · Venelles, FR

Key dates

• Filing date: Apr 4, 2019
• Grant date: Dec 28, 2021
• Expiry date: Nov 27, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/826

Abstract

The disclosure relates to integrated circuits including one or more rows of transistors and methods of forming rows of transistors. In an embodiment, an integrated circuit includes a row of bipolar transistors including a first semiconductor layer having a plurality of first conduction regions, a second semiconductor layer having a second conduction region, a common base between the first semiconductor layer and the second semiconductor layer, and a plurality of insulator walls extending in a first direction. The first conduction regions are separated from one another by the insulator walls. The integrated circuit further includes an insulating trench extending in a second direction and in contact with each of the bipolar transistors of the row of bipolar transistors. A conductive layer is coupled to the base, and the conductive layer extends through the insulator walls and extends at least partially into the insulating trench.