Inventor · Venelles, FR

Philippe Boivin

51Patents
3h-index
33Co-inventors
66Inventor score

Filing activity: Dec 14, 1988 → Apr 25, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US4997777A Manufacturing process for an integrated circuit comprising double gate components Electricity 21 Expired
US9929146B2 Method of forming MOS and bipolar transistors Electricity 4 Active
US10128314B2 Vertical bipolar transistor Electricity 3 Active
US8048685B2 Magnetic RAM Electricity 2 Active
US11653582B2 Chip containing an onboard non-volatile memory comprising a phase-change material Physics 2 Active
US9196654B2 Method of fabricating a vertical MOS transistor Electricity 2 Active
US7315071B2 Magnetic RAM Electricity 2 Expired
US9559297B2 Vertical transistor for resistive memory Electricity 2 Active
US8853615B2 Ultraviolet radiation measurement sensor Physics 1 Active
US9793321B2 Resistive memory cell having a compact structure Electricity 1 Active
US9735353B2 Phase-change memory cell having a compact structure Physics 1 Active
US10714501B2 Co-integration of bulk and SOI transistors Electricity 1 Active
US8680603B2 Transistor comprising nanocrystals and related devices Electricity 1 Active
US11875847B2 Self-referenced and regulated sensing solution for phase change memory with ovonic threshold switch Physics 1 Active
US11411177B2 Phase-change memory with insulated walls Electricity 1 Active
US11957067B2 Phase-change memory cell having a compact structure Physics 1 Active
US10431630B2 Method for producing transistors, in particular selection transistors for non-volatile memory, and corresponding device Electricity 1 Active
US12342734B2 Phase-change memory Electricity 0 Active
US8921219B2 Process for fabricating a transistor comprising nanocrystals Electricity 0 Active
US6590256B2 EEPROM cell testing circuit Physics 0 Expired
US11114614B2 Process for fabricating resistive memory cells Electricity 0 Active
US8999796B2 Manufacturing process of memory cells Electricity 0 Active
US8830761B2 Method of reading and writing nonvolatile memory cells Physics 0 Active
US9941390B2 Method of fabricating a vertical MOS transistor Electricity 0 Active
US11211428B2 Integrated circuit including transistors having a common base Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.