2D crystal hetero-structures and manufacturing methods thereof
US11211460B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 21, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Sep 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.