Method of manufacturing a semiconductor device
US11211471B1 · kind B1 · utility
2Cited by
17References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Sep 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a metal gate process. A sacrificial nitride layer is introduced during the fabrication of metal gates. The gate height can be well controlled by introducing the sacrificial nitride layer. Further, the particle fall-on problem can be effectively solved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.