Semiconductor device and formation method thereof

US11211475B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Haiyang Zhang · Shanghai, CN
• Jian Chen · Austin, US
• Bo SU · Shanghai, CN

Key dates

• Filing date: Jun 28, 2020
• Grant date: Dec 28, 2021
• Expiry date: Jun 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76897
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a method of forming a semiconductor device includes providing a semiconductor structure, etching back each gate structure of a plurality of gate structures to form an opening, forming a barrier layer over the dielectric layer, forming a sacrificial layer over the barrier layer, planarizing the sacrificial layer till a surface of the sacrificial layer is substantially flat, and using a gas cluster ion beam (GCIB) process to planarize the sacrificial layer and the barrier layer, and to remove the sacrificial layer and to provide a planarized barrier layer. The semiconductor structure includes a semiconductor substrate, a fin, the plurality of gate structures, and a dielectric layer over the semiconductor substrate between adjacent gate structures. A top of the dielectric layer is coplanar with a top of each of the plurality of gate structures.