Light emitting diode (LED) devices with high density textures
US11211527B2 · kind B2 · utility
3Cited by
21References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2019 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Feb 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02472
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.