Patent · US Active

Magnetic memory devices with magnetic field sensing and shielding

US11211550B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 27, 2020
Grant dateDec 28, 2021
Priority date
Expiry dateJul 27, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/01
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In a non-limiting embodiment, a magnetic memory device includes a memory component having a plurality of magnetic storage elements for storing memory data, and one or more sensor components configured to detect a magnetic field external to the memory component. The sensor component outputs a signal to one or more components of the magnetic memory device based on the detected magnetic field. The memory component is configured to be terminated when the signal is above a predetermined threshold value. In some embodiments, a magnetic field is generated in a direction opposite to the direction of the detected external magnetic field when the signal is above the predetermined threshold value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.