CMP polishing pad conditioner
US11213927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2018 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Jan 20, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B53/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of processing chemical mechanical polishing (CMP) pad conditioners includes providing the CMP pad conditioner including conditioner substrate that is a metal, ceramic or a metal-ceramic material with a plurality of hard conditioner particles with a Vickers hardness greater than 3,000 Kg/mm2 bonded to a top surface of the conditioner substrate, and a slurry including an aqueous medium and a plurality of hard slurry particles having a hardness greater than 3,000 Kg/mm2. The surface of the pad conditioner is polished in a CMP apparatus using a polishing pad. After the polishing each conditioner particle has at least one exposed facet, and the plurality of hard conditioner particles have a maximum average protrusion-to-protrusion flatness (PPF) difference of 20 microns, and a sharpest edge measured by a value of a cutting edge radius (CER) that lies at an edge of the facet for at least 80% of the facets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.