Residual layer thickness compensation in nano-fabrication by modified drop pattern
US11215921B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Jul 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method comprises selecting an initial drop pattern defining a position of drops of a formable material, the initial drop pattern comprising a grid pattern of drops, designating the drops of the grid pattern to be dispensed by a first series of nozzles of a dispenser based on a spacing between drops in the Y-dimension; generating a modified drop pattern by shifting the grid pattern in a first direction along the Y-dimension, wherein a shift distance is selected such that the drops of the shifted grid pattern are designated to be dispensed from a second series of nozzles of the dispenser; dispensing the plurality of drops according to the modified drop pattern onto a substrate; during the dispensing of the drops, shifting a position of the stage or dispenser along the Y-dimension opposite to the first direction by an amount equal to the shift distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.