Non-volatile memory device and program method of a non-volatile memory device
US11217318B2 · kind B2 · utility
1Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Jan 13, 2017 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Jan 13, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5644
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a non-volatile memory includes executing at least two program loops on memory cells in a selected word line, generating a fail bit trend based on a result of executing each of the at least two program loops, predicting a plurality of program loops comprising an N program loop to be executed last on the memory cells, based on the generated fail bit trend, and changing, based on a result of predicting the plurality of program loops, a level of an N program voltage provided to the memory cells when the N program loop is executed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.