Inventor · Hwaseong-si, KR

Su-Jin Ahn

30Patents
8h-index
62Co-inventors
74Inventor score

Filing activity: Sep 5, 2002 → Jun 16, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US7440308B2 Phase-change random access memory device and method of operating the same Physics 78 Active
US7042760B2 Phase-change memory and method having restore function Physics 39 Expired
US7149103B2 Set programming methods and write driver circuits for a phase-change memory array Physics 30 Expired
US7482616B2 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same Electricity 29 Expired
US9595346B2 3-Dimensional semiconductor memory device and operating method thereof Electricity 19 Active
US7411208B2 Phase-change memory device having a barrier layer and manufacturing method Electricity 14 Expired
US10242997B2 Vertical memory devices Electricity 10 Active
US7282761B2 Semiconductor memory devices having offset transistors and methods of fabricating the same Electricity 9 Expired
US8026543B2 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same Electricity 7 Active
US9007819B2 Magnetic random access memory device and method of writing data therein Physics 6 Active
US7309885B2 PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same Electricity 6 Expired
US7480167B2 Set programming methods and write driver circuits for a phase-change memory array Physics 5 Active
US7105870B2 Phase-changeable memory devices Electricity 5 Expired
US6882561B2 Semiconductor memory device comprising memory having active restoration function Physics 4 Expired
US7521281B2 Methods of forming phase-changeable memory devices Electricity 3 Active
US7419909B2 Methods of forming a semiconductor device that allow patterns in different regions that have different pitches to be connected Electricity 3 Active
US6949783B2 Memory cell transistor having different source/drain junction profiles connected to DC node and BC node and manufacturing method thereof Electricity 2 Expired
US8709834B2 Methods of fabricating semiconductor device Electricity 1 Active
US7989869B2 Non-volatile memory devices having improved operational characteristics Electricity 1 Active
US7479405B2 PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same Electricity 1 Active
US11217318B2 Non-volatile memory device and program method of a non-volatile memory device Physics 1 Active
US8610192B2 Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regions Electricity 0 Active
US10700092B2 Vertical semiconductor devices and methods of manufacturing the same Electricity 0 Active
US10367002B2 Vertical semiconductor devices and methods of manufacturing the same Electricity 0 Active
US6903409B2 Semiconductor devices with scalable two transistor memory cells Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.