RF capacitive coupled dual frequency etch reactor
US11217434B2 · kind B2 · utility
2Cited by
3References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2017 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Oct 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.