Power semiconductor device, method for manufacturing power semiconductor device, and power conversion device
US11217514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Apr 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02P27/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a power semiconductor device, power semiconductor elements are mounted on a large die pad and the like. The large die pad is joined to a power lead via a lead stepped portion. The large die pad has a first end portion and a second end portion located with a distance therebetween in the X axis direction. In the Y axis direction, the lead stepped portion is joined to the first end portion side relative to a central line between the first end portion and the second end portion. The large die pad is inclined such that a distance between the large die pad and the first main surface of the molding resin is longer from the first end portion toward the second end portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.