Patent · US Active

Semiconductor device and method of forming a semiconductor device

US11217529B2 · kind B2 · utility

0Cited by

10References

30Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stefan Beyer · Mering, DE
Marius Aurel Bodea · Villach, AT
Jia Yi Wong · Melaka City, MY

Key dates

Filing date	Oct 3, 2019
Grant date	Jan 4, 2022
Priority date	—
Expiry date	Feb 6, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/35121
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.