Microelectronic devices including staircase structures, and related memory devices and electronic systems

US11217601B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Shuangqiang Luo · Boise, US
• Xuan Li · Ditzingen, DE
• Adeline Yii · Singapore, SG

Key dates

• Filing date: Oct 29, 2019
• Grant date: Jan 4, 2022
• Expiry date: Dec 21, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

A microelectronic device comprises a stack structure, at least one staircase structure, contact structures, and support structures. The stack structure comprises vertically alternating conductive structures and insulating structures arranged in tiers, each of the tiers individually comprising one of the conductive structures and one of the insulating structures. The at least one staircase structure is within the stack structure and has steps comprising edges of at least some of the tiers. The contact structures are on the steps of the at least one staircase structure. The support structures horizontally alternate with the contact structures in a first horizontal direction and vertically extend through the stack structure. The support structures have oblong horizontal cross-sectional shapes. Additional microelectronic devices, memory devices, and electronic systems are also described.