Semiconductor device and manufacturing method thereof
US11217629B2 · kind B2 · utility
2Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2020 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | May 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A semiconductor device includes a transistor and a memory device. The transistor includes a gate stack and a nanosheet penetrating through the gate stack. The memory device has a first portion and a second portion. A first portion of the gate stack is sandwiched between the first portion and the second portion of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.