Semiconductor heterostructures with wurtzite-type structure on ZnO substrate
US11217663B2 · kind B2 · utility
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Key dates
| Filing date | Nov 15, 2017 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Nov 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabricating a heterostructure made of semiconductor materials having a crystalline structure of wurtzite type, includes the following steps: structuring a surface of a zinc oxide monocrystalline substrate into mesas; depositing by epitaxy at least one layer of semiconductor materials having a crystalline structure of wurtzite type, forming the heterostructure, on top of the structured surface. Heterostructure obtained by such a process. A process for fabricating at least one electronic or optoelectronic device from such a heterostructure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.