Trench field electrode termination structure for transistor devices
US11217690B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Sep 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a trench formed in a surface of a semiconductor substrate and extending lengthwise in a direction parallel to the surface; a body region adjoining the trench; a source region adjoining the trench above the body region; a drift region adjoining the trench below the body region; a field electrode in a lower part of the trench and separated from the substrate; and a gate electrode in an upper part of the trench and separated from the substrate and the field electrode. A first section of the field electrode is buried below the gate electrode in the trench. A second section of the field electrode transitions upward from the first section in a direction toward the surface. The separation between the second section and the gate electrode is greater than or equal to the separation between the first section and the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.