Light emitting diode

US11217727B2 · kind B2 · utility

Assignees

• TSINGHUA UNIVERSITY · CN
• HON HAI PRECISION INDUSTRY CO., LTD. · TW

Inventors

• Jin Zhang · Beijing, CN
• Yang Wei · Beijing, CN
• Shou-Shan Fan · Beijing, CN

Key dates

• Filing date: Jun 16, 2020
• Grant date: Jan 4, 2022
• Expiry date: Jul 17, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

The present disclosure relates to a light emitting diode. The light emitting diode comprises a first semiconductor layer, a second semiconductor layer, an active layer, a first electrode, and a second electrode. The active layer is located between the first semiconductor layer and the second semiconductor layer. The first electrode is a first carbon nanotube, the second electrode is a second carbon nanotube. A first extending direction of the first carbon nanotube and a second extending direction of the second carbon nanotube are crossed with each other. A vertical p-n junction or a vertical p-i-n junction is formed by the first semiconductor layer and the second semiconductor layer in a direction perpendicular to the first semiconductor layer.