EUV collector contamination prevention
US11219115B2 · kind B2 · utility
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27References
20Claims
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Key dates
| Filing date | Apr 3, 2020 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Apr 3, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70916
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.