Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step
US11220759B2 · kind B2 · utility
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Key dates
| Filing date | Feb 6, 2020 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Feb 6, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/403
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.