Yusuke Mori
149Patents
8h-index
187Co-inventors
83Inventor score
Filing activity: Jan 22, 1988 → Jun 28, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6842233B2 | Method of classifying particles on two-dimensional frequency distribution map and blood analyzer utilizing the same | Physics | 37 | Expired |
| US7058103B2 | Light-emitting apparatus, phosphor, and method of producing it | Emerging Cross-Sectional Technologies | 28 | Expired |
| US7288152B2 | Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same | Electricity | 27 | Expired |
| US7176115B2 | Method of manufacturing Group III nitride substrate and semiconductor device | Electricity | 17 | Expired |
| US4872415A | Meter for a vehicle | Performing Operations; Transporting | 15 | Expired |
| US5998313A | Cesium-lithium borate crystal | Chemistry; Metallurgy | 13 | Expired |
| US7948673B2 | Optical wavelength conversion element having a cesium-lithium-borate crystal | Physics | 9 | Active |
| US7049093B2 | Method of classifying and counting nucleated bone marrow cells | Physics | 8 | Expired |
| US8679425B2 | Reagent container and reagent set | Performing Operations; Transporting | 8 | Active |
| US7905958B2 | Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device | Electricity | 8 | Active |
| US9834859B2 | Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device | Electricity | 7 | Active |
| US6296784A | Cesium-lithium-borate crystal and its application to frequency conversion of laser light | Physics | 7 | Expired |
| US7405082B2 | Methods and devices for measuring reticulocytes | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6843849B1 | Method and apparatus for growing high quality single crystal | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7309534B2 | Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same | Electricity | 6 | Expired |
| US7435295B2 | Method for producing compound single crystal and production apparatus for use therein | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7381268B2 | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6551528B1 | Wavelength conversion crystal and method for generating laser beam, and apparatus for generating laser beam | Electricity | 5 | Expired |
| US7142354B2 | Wavelength conversion method, wavelength conversion device, and laser beam machine | Physics | 4 | Expired |
| US7459023B2 | Method for producing semiconductor crystal | Chemistry; Metallurgy | 4 | Active |
| US8037739B2 | Method for analyzing sample in liquid | Physics | 4 | Active |
| US11348370B2 | Iris authentication device, iris authentication method, and recording medium | Physics | 4 | Active |
| US7507292B2 | Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby | Chemistry; Metallurgy | 4 | Expired |
| US7625730B2 | Method for classifying and counting leukocytes | Physics | 3 | Expired |
| US7833347B2 | Process and apparatus for producing nitride single crystal | Emerging Cross-Sectional Technologies | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.