System with a SPAD-based semiconductor device having dark pixels for monitoring sensor parameters
US11221253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2020 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Dec 7, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device may include a plurality of single-photon avalanche diodes (SPADs). The semiconductor device may include sensing single-photon avalanche diodes that are sensitive to incident light and dark single-photon avalanche diodes that are shielded from incident light. The dark single-photon avalanche diodes may be used to measure one or more parameters for the semiconductor device such as breakdown voltage, dark count rate, and quench resistance. Processing circuitry may optimize a bias voltage for the semiconductor device based on information regarding one or more sensor parameters obtained using the dark single-photon avalanche diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.