MRAM cross-point memory with reversed MRAM element vertical orientation
US11222678B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2020 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Oct 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a memory array with a cross-point structure, at each cross-point junction a programmable resistive memory element, such as an MRAM device, is connected in series with a threshold switching selector, such as an ovonic threshold switch. In a two-layer cross-point structure with such memory cells, the MRAM devices in one layer are inverted relative to the MRAM devices in the other layer. This can allow for the transient voltage spike placed across the MRAM device when the threshold switching selector first turns on in a sensing operation to dissipate more rapidly, reducing the risk of changing a stored data state before it can be sensed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.