Formation method of semiconductor device structure with metal-semiconductor compound region
US11222818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2018 |
| Grant date | Jan 11, 2022 |
| Priority date | — |
| Expiry date | Oct 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure, and the epitaxial structure is adjacent to the gate stack. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes applying a metal-containing material on the epitaxial structure while the epitaxial structure is heated so that a portion of the epitaxial structure is transformed to form a metal-semiconductor compound region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.